PACKAGING EFFECTS ON TRANSISTOR RADIATION RESPONSE

被引：9

作者：

BERGER, RA ^{[1
]}

AZAREWICZ, JL ^{[1
]}

机构：

[1] IRT CORP,SAN DIEGO,CA 92138

来源：

关键词：

D O I：

10.1109/TNS.1975.4328169

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2568 / 2572

页数：5

共 11 条

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DOLAN, KW
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[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (06) : 227 - 234
[4] IONIZATION, SECONDARY EMISSION, AND COMPTOM CURRENTS AT GAMMA IRRADIATED INTERFACES
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BURKE, EA
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) : 162 - +
[5] LIPMAN J, COMMUNICATION
[6] LONG DM, 1974, AFCRLTR740283
[7] RAUCH JE, 1974, MLR324 MAXW LAB REP
[8] VANLINT VAJ, 1968, GA8810 GEN AT REP
[9] GAMMA-DOSE DISTRIBUTIONS AT AND NEAR INTERFACE OF DIFFERENT MATERIALS
WALL, JA
BURKE, EA
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1970, NS17 (06) : 305 - &
[10] WROBEL TF, 1975, JUL IEEE C NUCL SPAC