EFFECT OF ELASTIC STRAIN ON INTERBAND TUNNELING IN SB-DOPED GERMANIUM

被引：32

作者：

FRITZSCHE, H

TIEMANN, JJ

机构：

来源：

PHYSICAL REVIEW | 1963年 / 130卷 / 02期

关键词：

D O I：

10.1103/PhysRev.130.617

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：617 / &

共 27 条

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[10]

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