MAGNETIC-SUSCEPTIBILITY OF GE-SB

被引：6

作者：

MATSUNAGA, N

OOTUKA, Y

机构：

[1] Cryogenic Center, University of Tokyo, Bunkyo-ku, Tokyo, 113

来源：

SOLID STATE COMMUNICATIONS | 1990年 / 75卷 / 03期

关键词：

D O I：

10.1016/0038-1098(90)90280-O

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The static magnetic susceptibility of Ge:Sb is measured across the metal-insulator transition at the temperature down to 10 mK. Insulating samples show paramagnetic variation which is expressed roughly as T-a. A lightly metallic sample also shows paramagnetic deviation and no distinct change is observed across the metal-insulator transition. Comparison with Si:P is given. © 1990.

引用

页码：255 / 257

页数：3

共 7 条

[1] LOW-TEMPERATURE MAGNETIC-SUSCEPTIBILITY OF SI-P IN THE NON-METALLIC REGION [J].

ANDRES, K ;

BHATT, RN ;

GOALWIN, P ;

RICE, TM ;

WALSTEDT, RE .

PHYSICAL REVIEW B, 1981, 24 (01) :244-260

[2] A SCALING METHOD FOR LOW-TEMPERATURE BEHAVIOR OF RANDOM ANTI-FERROMAGNETIC SYSTEMS [J].

BHATT, RN ;

LEE, PA .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) :1703-1707

[3] ELECTRONIC TRANSPORT IN METALLIC GE-SB AT VERY LOW-TEMPERATURE [J].

OOTUKA, Y ;

KOBAYASHI, S ;

SASAKI, W .

PHYSICA B & C, 1983, 117 (MAR) :700-702

[4] ANISOTROPIC MAGNETOCONDUCTANCE IN METALLIC DOPED GE-SB [J].

OOTUKA, Y ;

KATSUMOTO, S ;

KOBAYASHI, SI ;

SASAKI, W .

SOLID-STATE ELECTRONICS, 1985, 28 (1-2) :101-107

[5]

OOTUKA Y, 1988, SPRINGER P PHYSICS, V28, P40

[6]

OOTUKA Y, 1988, SPRINGER P PHYSICS, V28, P24

[7]

OOTUKA Y, 1990, J PHYS SOC JPN, V59, P1771

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