LATERAL MODULATIONS IN ZERO-NET-STRAINED GAINASP MULTILAYERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引：84

作者：

PONCHET, A ^{[1
]}

ROCHER, A ^{[1
]}

EMERY, JY ^{[1
]}

STARCK, C ^{[1
]}

GOLDSTEIN, L ^{[1
]}

机构：

[1] ALCATEL ALSTHOM RECH,F-91460 MARCOUSSIS,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 06期

关键词：

D O I：

10.1063/1.354469

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Compressive GalnAsP multiple quantum wells (MQW) grown by gas source molecular-beam epitaxy present altered structural and optical characteristics when tensile GaInAsP barriers are used instead of lattice-matched ones. An alternate tensile,/compressive GaInAsP MQW has been examined by transmission electron microscopy. A strong lateral modulation of thickness, strain, and probably chemical composition was shown. This modulation exhibits pronounced anisotropy, with a periodicity of about 50 nm along the [110] direction. Although its origin is not fully accounted for yet, it seems to allow partial elastic relaxation of tensile layers. Based on this analysis, a schematic description of distortion modulation is proposed.

引用

页码：3778 / 3782

页数：5

共 15 条

[1]

ANTERROCHES C, 1990, EVALUATION ADV SEMIC

[2]

BENNETT BR, 1991, J ELECTRON MATER, V20, P1075, DOI 10.1109/ICIPRM.1991.147468

[3] ROLE OF STRAIN AND GROWTH-CONDITIONS ON THE GROWTH FRONT PROFILE OF INXGA1-XAS ON GAAS DURING THE PSEUDOMORPHIC GROWTH REGIME [J].