THIN-FILM STRUCTURES FOR LOW-FIELD GRANULAR GIANT MAGNETORESISTANCE

被引：7

作者：

COFFEY, KR

HYLTON, TL

PARKER, MA

HOWARD, JK

机构：

[1] IBM Storage Systems Division, San Jose, CA 95193

来源：

SCRIPTA METALLURGICA ET MATERIALIA | 1995年 / 33卷 / 10-11期

关键词：

D O I：

10.1016/0956-716X(95)00390-H

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Giant magnetoresistance (GMR) is a relatively new field of study pursued by scientists and technologists alike. A potential application of GMR thin films is the replacement of NiFe alloy thin films (having anisotropic magnetoresistance) to obtain greater signal. Applications of this type require that the GMR be obtained at low fields, on the order of 10 Oe. In this paper three types of granular GMR thin film structures are described: codeposited heterogeneous alloys, granular bi-layers, and discontinuous multilayers. Experimental examples of each type are presented, and the field dependence of GMR for each structure is discussed. Only discontinuous multilayer thin film structures have shown suitable GMR at low fields, and the properties and microstructure of these thin films will be described in greater detail.

引用

收藏

页码：1593 / 1602

页数：10

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