ELECTRIC-CURRENT CONTROLLED GROWTH AND DOPING MODULATION IN GAAS LIQUID-PHASE EPITAXY

被引：47

作者：

LAWRENCE, DJ ^{[1
]}

EASTMAN, LF ^{[1
]}

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

来源：

JOURNAL OF CRYSTAL GROWTH | 1975年 / 30卷 / 02期

关键词：

D O I：

10.1016/0022-0248(75)90098-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：267 / 275

页数：9

共 17 条

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[2]

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[8]

KANG CS, 1969, 1968 GAAS S P I PHYS, P18

[9] CURRENT-CONTROLLED GROWTH AND DOPANT MODULATION IN LIQUID-PHASE EPITAXY [J].

KUMAGAWA, M ;

WITT, AF ;

LICHTENSTEIGER, M ;

GATOS, HC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (04) :583-584

[10] MODULATION OF DOPANT SEGREGATION BY ELECTRIC CURRENTS IN CZOCHRALSKI-TYPE CRYSTAL GROWTH [J].

LICHTENSTEIGER, M ;

WITT, AF ;

GATOS, HC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (06) :1013-+

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