QUASI-BALLISTIC CORRECTIONS TO BASE TRANSIT-TIME IN BIPOLAR-TRANSISTORS

被引：10

作者：

HERBERT, DC

机构：

[1] R. Signals and Radar Establ., Malvern

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 05期

关键词：

D O I：

10.1088/0268-1242/6/5/017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple analytic expression is derived for the base transit time of a bipolar transistor that allows for ballistic corrections. Differences with published Monte Carlo results suggest that the standard use of an absorbing boundary at the base-emitter junction in the Monte Carlo method requires closer examination.

引用

页码：405 / 407

页数：3

共 6 条

[1]

Bacarani G, Jacoboni C, Mazzone AM, Current transport in narrow-base transistors, Solid-State Electronics, 20, 1, (1977)

[2]

Cook RK, Numerical simulation of hot-carrier transport in silicon bipolar transistors, IEEE Transactions on Electron Devices, 30, 9, (1983)

[3]

Herbert DC, Jefferson JH, Anderson JD, (1989)

[4]

Herbert DC, Higgs AW, Hutchinson HJ, Smith GW, 6, 5, (1991)

[5]

Kroemer H, Solid State Electron., 28, 11, (1985)

[6]

Maziar CM, Lundstrom MS, IEEE Trans Electron. Device Lett., 8, 3, (1987)

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