OPTOELECTRONIC PROPERTIES OF CD1-XZNXTE FILMS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS SUBSTRATES

被引:164
作者
OLEGO, DJ [1 ]
FAURIE, JP [1 ]
SIVANANTHAN, S [1 ]
RACCAH, PM [1 ]
机构
[1] UNIV ILLINOIS,DEPT PHYS,CHICAGO,IL 60680
关键词
D O I
10.1063/1.96316
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:1172 / 1174
页数:3
相关论文
共 7 条
  • [1] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY HGTE AND HG1-XCDXTE ONTO GAAS (001) SUBSTRATES
    FAURIE, JP
    SIVANANTHAN, S
    BOUKERCHE, M
    RENO, J
    [J]. APPLIED PHYSICS LETTERS, 1984, 45 (12) : 1307 - 1309
  • [2] A PHOTOLUMINESCENCE STUDY OF MOLECULAR-BEAM EPITAXY GROWN CDTE-FILMS ON (001) INSB SUBSTRATES
    FENG, ZC
    MASCARENHAS, A
    CHOYKE, WJ
    FARROW, RFC
    SHIRLAND, FA
    TAKEI, WJ
    [J]. APPLIED PHYSICS LETTERS, 1985, 47 (01) : 24 - 25
  • [3] PHOTOLUMINESCENCE OF CDTE - A COMPARISON OF BULK AND EPITAXIAL MATERIAL
    GILESTAYLOR, NC
    BICKNELL, RN
    BLANKS, DK
    MYERS, TH
    SCHETZINA, JF
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01): : 76 - 82
  • [4] EXAFS OF CD1-XZNXTE - A TEST OF THE RANDOM DISTRIBUTION IN ZINCBLENDE TERNARY ALLOYS
    MOTTA, N
    BALZAROTTI, A
    LETARDI, P
    KISIEL, A
    CZYZYK, MT
    ZIMNALSTARNAWSKA, M
    PODGORNY, M
    [J]. SOLID STATE COMMUNICATIONS, 1985, 53 (06) : 509 - 512
  • [5] ALLOY BROADENING IN PHOTOLUMINESCENCE SPECTRA OF ALXGA1-XAS
    SCHUBERT, EF
    GOBEL, EO
    HORIKOSHI, Y
    PLOOG, K
    QUEISSER, HJ
    [J]. PHYSICAL REVIEW B, 1984, 30 (02) : 813 - 820
  • [6] THOMAS GA, 1980, HDB SEMICONDUCTORS, V2, P45
  • [7] ELECTRONIC STRUCTURES OF SEMICONDUCTOR ALLOYS
    VANVECHTEN, JA
    BERGSTRESSER, TK
    [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (08): : 3351 - +