QUANTITATIVE-ANALYSIS OF STRAIN RELAXATION IN GEXSI1-X/SI(110) HETEROSTRUCTURES AND AN ACCURATE DETERMINATION OF STACKING-FAULT ENERGY IN GEXSI1-X ALLOYS

被引：44

作者：

HULL, R

BEAN, JC

PETICOLAS, LJ

BAHNCK, D

WEIR, BE

FELDMAN, LC

机构：

[1] AT and T Bell Laboratories, Murray Hill

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 23期

关键词：

D O I：

10.1063/1.108068

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a quantitative theoretical and experimental analysis of strain relaxation in GexSi1-x/Si(110) heterostructures. It is shown that above a critical composition, the critical thickness for edge a/6(112) Shockley partial dislocations is less than that for 60-degrees a/2 [110] total dislocations. The net (excess) stress is greater on the edge a/6[112] dislocations for epilayer thicknesses, h<h(x), but greater on the 60-degrees a/2[110] dislocations for h > h(x). The sensitive calculated dependence of h(x) upon the stacking fault energy per unit area gamma allows an experimental determination of gamma = 65 +/- 10 mJ m-2 for x is similar to 0.3 in GexSi1-x.

引用

页码：2802 / 2804

页数：3

共 12 条

[1] RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW [J].