ANTIFERROELECTRIC-PHASE PLZT FOR USE IN HIGH-DENSITY OPTICAL-DATA STORAGE

被引:3
作者
MANCHA, S
BULLINGTON, J
CARTER, R
DEHAINAUT, C
机构
关键词
D O I
10.1080/00150198808201342
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:99 / 104
页数:6
相关论文
共 10 条
[1]  
BLEHA WP, 1983, LASER FOCUS ELEC OCT, P111
[2]  
BORDOGNA J, 1977, TOPICS APPLIED PHYSI, V20, P236
[3]   DISPLAY APPLICATIONS OF FIELD-ENFORCED PHASE-TRANSITION IN PLZT CERAMICS [J].
KUMADA, A ;
SUZUKI, K ;
TODA, G .
FERROELECTRICS, 1976, 10 (1-4) :25-28
[4]   ELECTROOPTIC IMAGE STORAGE DEVICE USING FIELD-INDUCED REVERSIBLE TRANSITIONS BETWEEN AFE AND FE PHASES OF PLZT CERAMICS [J].
KUMADA, A ;
TODA, G ;
OTOMO, Y .
FERROELECTRICS, 1974, 7 (1-4) :367-369
[5]   PHOTO-FERROELECTRIC IMAGE STORAGE IN ANTI-FERROELECTRIC-PHASE PLZT CERAMICS [J].
LAND, CE .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (08) :1143-1147
[6]  
LAND CE, 1985, JPN J APPL PHYS, V24, P134
[7]  
LAND CE, 1974, APPLIED SOLID STATE, V4
[8]  
MICHERON F, 1972, CR ACAD SCI B PHYS, V274, P361
[9]   ION-IMPLANTED PLZT CERAMICS - A NEW HIGH-SENSITIVITY IMAGE STORAGE MEDIUM [J].
PEERCY, PS ;
LAND, CE .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (06) :756-762
[10]  
VEST CM, 1979, HOLOGRAPHIC INTERFER, P18