ANODIC-OXIDATION OF SI IN OXYGEN CHLORINE PLASMA

被引：4

作者：

HANEJI, N

ARAI, F

ASADA, K

SUGANO, T

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 02期

关键词：

D O I：

10.1109/T-ED.1985.21919

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：100 / 105

页数：6

共 11 条

[1] ELECTRONIC STRUCTURE OF DEFECT CENTERS IN SIO2 [J].

BENNETT, AJ ;

ROTH, LM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (06) :1251-&

[2]

DEAL BE, 1969, J ELECTROCHEM SOC, V116, P957

[3]

Haneji N., 1983, Transactions of the Institute of Electronics and Communication Engineers of Japan, Part C, VJ66C, P1064

[4]

HO VQ, 1981, IEEE T ELECTRON DEV, V28, P1060, DOI 10.1109/T-ED.1981.20485

[5]

HO VQ, 1980, IEEE T ELECTRON DEV, V27, P1436, DOI 10.1109/T-ED.1980.20053

[6] HOLE TRAPS IN THERMAL SILICON DIOXIDE INTRODUCED BY CHLORINE [J].

MANCHANDA, L ;

VASI, J ;

BHATTACHARYYA, AB .

APPLIED PHYSICS LETTERS, 1980, 37 (08) :744-747

[7] ELECTROCHEMICAL CHARGING OF THERMAL SIO2 FILMS BY INJECTED ELECTRON CURRENTS [J].

NICOLLIA.EH ;

BERGLUND, CN ;

SCHMIDT, PF ;

ANDREWS, JM .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) :5654-&

[8]

NING TH, 1974, J APPL PHYS, V45, P5373, DOI 10.1063/1.1663246

[9] THE ELECTRONIC-STRUCTURE OF IMPURITIES AND DEFECTS IN SIO2 [J].

PANTELIDES, ST .

THIN SOLID FILMS, 1982, 89 (01) :103-108

[10] THEORY OF CONTINUOUSLY DISTRIBUTED TRAP STATES AT SI-SIO2 INTERFACES [J].

SAKURAI, T ;

SUGANO, T .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) :2889-2896

← 1 2 →