MEASUREMENT OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON A ROTATING SUBSTRATE

被引：8

作者：

TURNER, GW ^{[1
]}

ISLES, AJ ^{[1
]}

机构：

[1] HOWARD UNIV,WASHINGTON,DC 20059

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 04期

关键词：

D O I：

10.1116/1.586241

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A technique has been developed for the measurement and analysis of reflection high-energy electron diffraction (RHEED) oscillations occurring during molecular-beam epitaxy on a rotating substrate. Previously, it has been necessary to stop substrate rotation in order to perform RHEED oscillation analysis. This limitation has been overcome by combining a computerized video tracking system with a previously reported technique for frequency-domain analysis.

引用

页码：1784 / 1786

页数：3

共 6 条

[1] CURRENT UNDERSTANDING AND APPLICATIONS OF THE RHEED INTENSITY OSCILLATION TECHNIQUE [J].