SCHOTTKY-BARRIER CHARACTERISTICS OF METAL-AMORPHOUS-SILICON DIODES

被引：155

作者：

WRONSKI, CR ^{[1
]}

CARLSON, DE ^{[1
]}

DANIEL, RE ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

APPLIED PHYSICS LETTERS | 1976年 / 29卷 / 09期

关键词：

D O I：

10.1063/1.89158

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：602 / 605

页数：4

共 13 条

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[9] AMORPHOUS SILICON P-N-JUNCTION [J].

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