HOLE TUNNELING TIMES IN GAAS/ALAS DOUBLE-BARRIER STRUCTURES

被引：39

作者：

YU, ET

JACKSON, MK

MCGILL, TC

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 08期

关键词：

D O I：

10.1063/1.101793

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：744 / 746

页数：3

共 16 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :R1-R29

[2] ELECTRONIC-STRUCTURE AND SEMICONDUCTOR-SEMIMETAL TRANSITION IN INAS-GASB SUPER-LATTICES [J].

ALTARELLI, M .

PHYSICAL REVIEW B, 1983, 28 (02) :842-845

[3]

[Anonymous], 1966, SEMICONDUCTORS SEMIM

[4] ENERGY-BAND ALIGNMENT IN GAAS - (AL,GA)AS HETEROSTRUCTURES - THE DEPENDENCE ON ALLOY COMPOSITION [J].

BATEY, J ;

WRIGHT, SL .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (01) :200-209

[5] TRAVERSAL TIME FOR TUNNELING [J].

BUTTIKER, M ;

LANDAUER, R .

PHYSICAL REVIEW LETTERS, 1982, 49 (23) :1739-1742

[6] THE QUANTUM-MECHANICAL TUNNELLING TIME PROBLEM - REVISITED [J].

COLLINS, S ;

LOWE, D ;

BARKER, JR .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1987, 20 (36) :6213-6232

[7]

FASOLINO A, 1984, 2 DIMENSIONAL SYSTEM, P176

[8] TIME-DEPENDENT INVESTIGATION OF THE RESONANT TUNNELING IN A DOUBLE-BARRIER QUANTUM WELL [J].

GUO, H ;

DIFF, K ;

NEOFOTISTOS, G ;

GUNTON, JD .

APPLIED PHYSICS LETTERS, 1988, 53 (02) :131-133

[9] LIFETIME OF RESONANT STATE IN A RESONANT TUNNELING SYSTEM [J].

HARADA, N ;

KURODA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (11) :L871-L873

[10] ELECTRON-TUNNELING TIME MEASURED BY PHOTOLUMINESCENCE EXCITATION CORRELATION SPECTROSCOPY [J].

JACKSON, MK ;

JOHNSON, MB ;

CHOW, DH ;

MCGILL, TC ;

NIEH, CW .

APPLIED PHYSICS LETTERS, 1989, 54 (06) :552-554

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