PROTON GLASS DIELECTRIC SUSCEPTIBILITY COMPARED WITH MONTE-CARLO AND BOUND CHARGE SEMICONDUCTOR MODEL PREDICTIONS

被引:19
作者
SCHMIDT, VH [1 ]
TRYBULA, Z [1 ]
HE, D [1 ]
DRUMHELLER, JE [1 ]
STIGERS, C [1 ]
LI, Z [1 ]
HOWELL, FL [1 ]
机构
[1] UNIV N DAKOTA,DEPT PHYS,GRAND FORKS,ND 58202
基金
美国国家科学基金会;
关键词
D O I
10.1080/00150199008214569
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Our latest results for dielectric permittivity and loss and protonic conductivity in RADP, RADA and DRADA proton glasses are presented. Improvements in our “bound charge semiconductor” model for dielectric behavior are discussed. Monte Carlo studies of the phase diagram and polarization decay are described. Bias order parameter. temperature plots from the simulation and from ND4deuteron NMR lineshapes are compared. © 1990, Taylor & Francis Group, LLC. All rights reserved.
引用
收藏
页码:119 / 124
页数:6
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