SEMICONDUCTOR MASER OF GAAS

被引：332

作者：

QUIST, TM

REDIKER, RH

KEYES, RJ

KRAG, WE

LAX, B

MCWHORTER, AL

ZEIGLER, HJ

机构：

来源：

关键词：

D O I：

10.1063/1.1753710

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：91 / 92

页数：2

共 6 条

[1] LASER CONDITIONS IN SEMICONDUCTORS
BERNARD, MGA
DURAFFOURG, G
[J]. PHYSICA STATUS SOLIDI, 1961, 1 (07): : 699 - 703
[2] INTERBAND TRANSITIONS AND MASER ACTION
DUMKE, WP
[J]. PHYSICAL REVIEW, 1962, 127 (05): : 1559 - &
[3] HALL RN, UNPUB PHYS REV LETT
[4] KEYES RJ, 1962, P IRE, V50, P1822
[5] STIMULATED EMISSION OF RADIATION FROM GAAS P-N JUNCTIONS
NATHAN, MI
DUMKE, WP
BURNS, G
DILL, FH
LASHER, G
[J]. APPLIED PHYSICS LETTERS, 1962, 1 (03) : 62 - 64
[6] ZEIGER HJ, 1959, AD231991, P41