GRAIN-BOUNDARY DIFFUSION IN POLYCRYSTALLINE SILICON FILMS ON SIO2

[1] Baumgart H., 1982, Grain Boundaries in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P311

[2] ANALYSIS OF PENETRATION DATA FROM GRAIN BOUNDARY DIFFUSION EXPERIMENTS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4361 - &

[3] CALCULATION OF DIFFUSION PENETRATION CURVES FOR SURFACE AND GRAIN BOUNDARY DIFFUSION [J]. JOURNAL OF APPLIED PHYSICS, 1951, 22 (01) : 74 - 77

[4] Frye R. C., 1982, Grain Boundaries in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P275

[5] Gupta D., 1978, Thin films. Interdiffusion and reactions, P161

[6] GRAIN-BOUNDARIES IN P-N-JUNCTION DIODES FABRICATED IN LASER-RECRYSTALLIZED SILICON THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (11) : 900 - 902

[7] MOSFETS IN LASER-RECRYSTALLIZED POLYSILICON ON QUARTZ [J]. ELECTRON DEVICE LETTERS, 1980, 1 (10): : 214 - 216

[8] CHARACTERISTICS OF MOSFETS FABRICATED IN LASER-RECRYSTALLIZED POLYSILICON ISLANDS WITH A RETAINING WALL STRUCTURE ON AN INSULATING SUBSTRATE [J]. ELECTRON DEVICE LETTERS, 1980, 1 (10): : 206 - 208

[9] LECLAIRE AD, 1963, BRIT J APPL PHYS, V14, P351

[10] THIN-FILM MOSFETS FABRICATED IN LASER-ANNEALED POLYCRYSTALLINE SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 173 - 175

[1] Baumgart H., 1982, Grain Boundaries in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P311

[2] ANALYSIS OF PENETRATION DATA FROM GRAIN BOUNDARY DIFFUSION EXPERIMENTS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4361 - &

[3] CALCULATION OF DIFFUSION PENETRATION CURVES FOR SURFACE AND GRAIN BOUNDARY DIFFUSION [J]. JOURNAL OF APPLIED PHYSICS, 1951, 22 (01) : 74 - 77

[4] Frye R. C., 1982, Grain Boundaries in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P275

[5] Gupta D., 1978, Thin films. Interdiffusion and reactions, P161

[6] GRAIN-BOUNDARIES IN P-N-JUNCTION DIODES FABRICATED IN LASER-RECRYSTALLIZED SILICON THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (11) : 900 - 902

[7] MOSFETS IN LASER-RECRYSTALLIZED POLYSILICON ON QUARTZ [J]. ELECTRON DEVICE LETTERS, 1980, 1 (10): : 214 - 216

[8] CHARACTERISTICS OF MOSFETS FABRICATED IN LASER-RECRYSTALLIZED POLYSILICON ISLANDS WITH A RETAINING WALL STRUCTURE ON AN INSULATING SUBSTRATE [J]. ELECTRON DEVICE LETTERS, 1980, 1 (10): : 206 - 208

[9] LECLAIRE AD, 1963, BRIT J APPL PHYS, V14, P351

[10] THIN-FILM MOSFETS FABRICATED IN LASER-ANNEALED POLYCRYSTALLINE SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 173 - 175