IR STUDY OF AMORPHOUS-SILICON NITRIDE FILMS

[1] BRODSKY MH, 1977, PHYS REV B, V3556, P16

[2] BROWN DM, 1968, J ELECTROCHEM SOC, V311, P115

[3] CHU TL, 1968, J ELECTROCHEM SOC, V318, P115

[4] CHU TL, 1967, J ELECTROCHEM SOC, V717, P14

[5] DALTON JV, 1968, J ELECTROCHEM SOC, V865, P115

[6] DRUM CM, 1968, J APPL PHYS, V4458, P39

[7] HU SM, 1967, J ELECTROCHEM SOC, V826, P114

[8] HU SM, 1966, J ELECTROCHEM SOC, V693, P113

[9] KNOLLE W, COMMUNICATION

[10] LANFORD WA, 1978, J APPL PHYS, V2473, P49

[1] BRODSKY MH, 1977, PHYS REV B, V3556, P16

[2] BROWN DM, 1968, J ELECTROCHEM SOC, V311, P115

[3] CHU TL, 1968, J ELECTROCHEM SOC, V318, P115

[4] CHU TL, 1967, J ELECTROCHEM SOC, V717, P14

[5] DALTON JV, 1968, J ELECTROCHEM SOC, V865, P115

[6] DRUM CM, 1968, J APPL PHYS, V4458, P39

[7] HU SM, 1967, J ELECTROCHEM SOC, V826, P114

[8] HU SM, 1966, J ELECTROCHEM SOC, V693, P113

[9] KNOLLE W, COMMUNICATION

[10] LANFORD WA, 1978, J APPL PHYS, V2473, P49