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PHOTOLUMINESCENCE AND SOLUTION GROWTH OF GALLIUM ARSENIDE
被引:36
作者
:
PANISH, MB
论文数:
0
引用数:
0
h-index:
0
PANISH, MB
QUEISSER, HJ
论文数:
0
引用数:
0
h-index:
0
QUEISSER, HJ
DERICK, L
论文数:
0
引用数:
0
h-index:
0
DERICK, L
SUMSKI, S
论文数:
0
引用数:
0
h-index:
0
SUMSKI, S
机构
:
来源
:
SOLID-STATE ELECTRONICS
|
1966年
/ 9卷
/ 04期
关键词
:
D O I
:
10.1016/0038-1101(66)90060-8
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:311 / &
相关论文
共 4 条
[1]
RADIATIVE RECOMBINATION FROM GAAS DIRECTLY EXCITED BY ELECTRON BEAMS
CUSANO, DA
论文数:
0
引用数:
0
h-index:
0
CUSANO, DA
[J].
SOLID STATE COMMUNICATIONS,
1964,
2
(11)
: 353
-
358
[2]
INFRARED TRANSMISSION + FLUORESCENCE OF DOPED GALLIUM ARSENIDE
HILL, DE
论文数:
0
引用数:
0
h-index:
0
HILL, DE
[J].
PHYSICAL REVIEW A-GENERAL PHYSICS,
1964,
133
(3A):
: A866
-
&
[3]
NELSON H, 1963, RCA REV, V24, P603
[4]
THE PREPARATION AND PROPERTIES OF GALLIUM ARSENIDE SINGLE CRYSTALS
WHELAN, JM
论文数:
0
引用数:
0
h-index:
0
WHELAN, JM
WHEATLEY, GH
论文数:
0
引用数:
0
h-index:
0
WHEATLEY, GH
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1958,
6
(2-3)
: 169
-
&
←
1
→
共 4 条
[1]
RADIATIVE RECOMBINATION FROM GAAS DIRECTLY EXCITED BY ELECTRON BEAMS
CUSANO, DA
论文数:
0
引用数:
0
h-index:
0
CUSANO, DA
[J].
SOLID STATE COMMUNICATIONS,
1964,
2
(11)
: 353
-
358
[2]
INFRARED TRANSMISSION + FLUORESCENCE OF DOPED GALLIUM ARSENIDE
HILL, DE
论文数:
0
引用数:
0
h-index:
0
HILL, DE
[J].
PHYSICAL REVIEW A-GENERAL PHYSICS,
1964,
133
(3A):
: A866
-
&
[3]
NELSON H, 1963, RCA REV, V24, P603
[4]
THE PREPARATION AND PROPERTIES OF GALLIUM ARSENIDE SINGLE CRYSTALS
WHELAN, JM
论文数:
0
引用数:
0
h-index:
0
WHELAN, JM
WHEATLEY, GH
论文数:
0
引用数:
0
h-index:
0
WHEATLEY, GH
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1958,
6
(2-3)
: 169
-
&
←
1
→