REALIZATION AND ELECTRICAL-PROPERTIES OF A MONOLITHIC METAL-BASE TRANSISTOR - THE SI/COSI2/SI STRUCTURE

[1] ATALLA MM, 1962, JUL IRE AIEE SOL STA

[2] BELHADDAD K, 1985, UNPUB 4TH NASECODE C

[3] CROWELL CR, 1967, PHYSICS THIN FILMS, V4

[4] DANTERROCHES C, THIN SOLID FILMS

[5] DAVITAYA FA, 1985, J VACUUM SCI TECHN B, V2, P770

[6] DELAGE S, 1985, UNPUB J PHYSIQUE

[7] GEPPERT DV, 1962, P IRE, V50, P1527

[8] TUNNELING HOT-ELECTRON TRANSFER AMPLIFIERS (THETA) - AMPLIFIERS OPERATING UP TO THE INFRARED [J]. SOLID-STATE ELECTRONICS, 1981, 24 (04) : 343 - 366

[9] Ishibashi K., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P868

[10] METAL-GATE TRANSISTOR [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (12) : 1751 - &

[1] ATALLA MM, 1962, JUL IRE AIEE SOL STA

[2] BELHADDAD K, 1985, UNPUB 4TH NASECODE C

[3] CROWELL CR, 1967, PHYSICS THIN FILMS, V4

[4] DANTERROCHES C, THIN SOLID FILMS

[5] DAVITAYA FA, 1985, J VACUUM SCI TECHN B, V2, P770

[6] DELAGE S, 1985, UNPUB J PHYSIQUE

[7] GEPPERT DV, 1962, P IRE, V50, P1527

[8] TUNNELING HOT-ELECTRON TRANSFER AMPLIFIERS (THETA) - AMPLIFIERS OPERATING UP TO THE INFRARED [J]. SOLID-STATE ELECTRONICS, 1981, 24 (04) : 343 - 366

[9] Ishibashi K., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P868

[10] METAL-GATE TRANSISTOR [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (12) : 1751 - &