STUDY OF SI4 AND SI4- USING THRESHOLD PHOTODETACHMENT (ZEKE) SPECTROSCOPY

被引:130
作者
ARNOLD, CC [1 ]
NEUMARK, DM [1 ]
机构
[1] LAWRENCE BERKELEY LAB, DIV CHEM SCI, BERKELEY, CA 94720 USA
关键词
D O I
10.1063/1.465145
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The threshold photodetachment (ZEKE) spectrum of Si4- is presented. Although no transitions to the ground state of Si4 are observed, we obtain detailed information on the anion and several of the low-lying excited states of neutral Si4. The spectrum shows a long progression of well-resolved transitions between the D2h B-2(2g) rhombus anion and v2 vibrational levels of the first excited D2h B-3(3u) neutral. The length and spacing of the progression is consistent with ab initio calculations performed by Rohlfing and Raghavachari [J. Chem. Phys. 96, 2114 (1992)], but some of the sequence bands observed within the progression are not. We also observe transitions to the Si4 B-1(3u) state which is found at a lower excitation energy than predicted. The perturbed vibrational structure in this band is attributed to vibronic coupling to a nearby electronic state which is ''dark'' with respect to ZEKE spectroscopy. The ZEKE spectra are compared to the previously obtained photoelectron spectra of Si4- as well as ab initio calculations on Si4- and Si4.
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收藏
页码:3353 / 3362
页数:10
相关论文
共 60 条
[1]   STABLE AND METASTABLE STATES OF THE SI5- ANION - THEORETICAL-STUDY [J].
ADAMOWICZ, L .
CHEMICAL PHYSICS LETTERS, 1992, 188 (1-2) :131-134
[2]   PHOTOEXCITATIONS OF THE SI4- ANION - THEORETICAL-STUDY [J].
ADAMOWICZ, L .
CHEMICAL PHYSICS LETTERS, 1991, 185 (3-4) :244-250
[3]   STUDY OF C-6(-) AND C-6 WITH THRESHOLD PHOTODETACHMENT SPECTROSCOPY AND AUTODETACHMENT SPECTROSCOPY [J].
ARNOLD, CC ;
ZHAO, YX ;
KITSOPOULOS, TN ;
NEUMARK, DM .
JOURNAL OF CHEMICAL PHYSICS, 1992, 97 (09) :6121-6135
[4]  
ARNOLD CC, IN PRESS J CHEM PHYS
[5]   VIBRATIONALLY RESOLVED SPECTRA OF C2-C-11 BY ANION PHOTOELECTRON-SPECTROSCOPY [J].
ARNOLD, DW ;
BRADFORTH, SE ;
KITSOPOULOS, TN ;
NEUMARK, DM .
JOURNAL OF CHEMICAL PHYSICS, 1991, 95 (12) :8753-8764
[6]   CAS SCF/CI CALCULATIONS ON SI-4 AND SI-4+ [J].
BALASUBRAMANIAN, K .
CHEMICAL PHYSICS LETTERS, 1987, 135 (03) :283-287
[7]   CAS SCF/CI CALCULATIONS OF LOW-LYING STATES AND POTENTIAL-ENERGY SURFACES OF SI3 [J].
BALASUBRAMANIAN, K .
CHEMICAL PHYSICS LETTERS, 1986, 125 (04) :400-406
[8]   PHOTOFRAGMENTATION OF MASS-RESOLVED SI-2-12(+) CLUSTERS [J].
BLOOMFIELD, LA ;
FREEMAN, RR ;
BROWN, WL .
PHYSICAL REVIEW LETTERS, 1985, 54 (20) :2246-2249
[9]   A STUDY OF CR-2 BY NEGATIVE-ION PHOTOELECTRON-SPECTROSCOPY [J].
CASEY, SM ;
VILLALTA, PW ;
BENGALI, AA ;
CHENG, CL ;
DICK, JP ;
FENN, PT ;
LEOPOLD, DG .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1991, 113 (17) :6688-6689
[10]   ULTRAVIOLET PHOTOELECTRON-SPECTROSCOPY OF SEMICONDUCTOR CLUSTERS - SILICON AND GERMANIUM [J].
CHESHNOVSKY, O ;
YANG, SH ;
PETTIETTE, CL ;
CRAYCRAFT, MJ ;
LIU, Y ;
SMALLEY, RE .
CHEMICAL PHYSICS LETTERS, 1987, 138 (2-3) :119-124