COPPER-DOPING LEVEL EFFECT ON SENSITIVITY AND SELECTIVITY OF TIN OXIDE THIN-FILM GAS SENSOR

被引：48

作者：

GALDIKAS, A

MIRONAS, A

SETKUS, A

机构：

[1] Semiconductor Sensors Laboratory, Semiconductor Physics Institute, Vilnius, 2600

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1995年 / 26卷 / 1-3期

关键词：

COPPER; DOPING; TIN OXIDE; GAS SENSOR;

D O I：

10.1016/0925-4005(94)01550-2

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The influence of doping level of basic material on electrical resistance controlled by gas chemisorption is investigated experimentally for chemically deposited tin oxide thin films with different amounts of Cu and Sb additives. Significant modification of dependences of resistance versus temperature in oxygen-rich atmosphere and anomalous change of selectivity of resistance response to CO and H-2 gas are obtained by different doping levels of the films. The main features of the experimental results are explained by the variation of the position of the Fermi level with the concentration of bulk impurities.

引用

页码：29 / 32

页数：4

共 8 条

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