SEMIEMPIRICAL TIGHTBINDING BANDSTRUCTURES FOR II-VI ZINCBLENDE COMPOUNDS

被引:13
作者
EKPENUMA, SN
MYLES, CW
机构
[1] Department of Physics and Engineering Physics, Texas Tech University, Lubbock
关键词
bandstructure; Brillouin zone; Electronic structure; tightbinding; zincblende compounds;
D O I
10.1016/0022-3697(90)90078-T
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We have used a modified version of the sp3s* semi-empirical nearest-neighbor tightbinding formalism to compute the bandstructures of the II-VI zincblende compounds ZnTe, ZnSe, ZnS, and HgSe. Our scheme includes the effects of spin-orbit coupling and, in contrast to previous sp3s* schemes which fit differences in diagonal tightbinding matrix elements to atomic energy differences, it fits every tightbinding parameter to available band structure data. The resulting parameters show that the scaling factors for the diagonal matrix elements used in previous sp3s* calculations are approximately valid for the compounds considered. The resulting bandstructures are in reasonable agreement with published pseudopotential calculations. © 1990.
引用
收藏
页码:93 / 100
页数:8
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