THERMAL-OXIDATION OF THE SILICIDES COSI2, CRSI2, NISI2, PTSI, TISI2 AND ZRSI2

被引：65

作者：

STRYDOM, WJ

LOMBAARD, JC

PRETORIUS, R

机构：

[1] UNIV STELLENBOSCH,DEPT PHYS,DIV SOLID STATE,STELLENBOSCH 7600,SOUTH AFRICA

[2] CSIR,CTR NATL ACCELERATOR,VAN DE GRAAFF GRP,DIV ION SOLID INTERACT,FAURE 7131,SOUTH AFRICA

来源：

THIN SOLID FILMS | 1985年 / 131卷 / 3-4期

关键词：

D O I：

10.1016/0040-6090(85)90142-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ELECTRON DEVICE MANUFACTURE

引用

页码：215 / 231

页数：17

共 30 条

[1] INTERFACE EFFECTS IN THE FORMATION OF SILICON-OXIDE ON METAL SILICIDE LAYERS OVER SILICON SUBSTRATES [J].

BAGLIN, JEE ;

DHEURLE, FM ;

PETERSSON, CS .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) :1849-1854

[2] THERMAL-OXIDATION OF TRANSITION-METAL SILICIDES - THE ROLE OF MASS-TRANSPORT [J].

BARTUR, M .

THIN SOLID FILMS, 1983, 107 (01) :55-65

[3] THERMAL-OXIDATION OF NICKEL DISILICIDE [J].

BARTUR, M ;

NICOLET, MA .

APPLIED PHYSICS LETTERS, 1982, 40 (02) :175-177

[4] THERMAL-OXIDATION OF COBALT DISILICIDE [J].

BARTUR, M ;

NICOLET, MA .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 29 (02) :69-70

[5] MARKER EXPERIMENTS FOR DIFFUSION IN THE SILICIDE DURING OXIDATION OF PDSI, PD2SI, COSI2, AND NISI2 FILMS ON [SI] [J].

BARTUR, M ;

NICOLET, MA .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5404-5405

[6] HIGH-TEMPERATURE OXIDATION .2. MOLYBDENUM SILICIDES [J].

BERKOWIT.JB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (06) :583-&

[7] CO2SI, CRSI2, ZRSI2 AND TISI2 FORMATION STUDIED BY A RADIOACTIVE SI-31 MARKER TECHNIQUE [J].

BOTHA, AP ;

PRETORIUS, R .

THIN SOLID FILMS, 1982, 93 (1-2) :127-133

[8] OXIDATION MECHANISMS IN TISI2 FILMS ON SINGLE SILICON SUBSTRATES [J].

CHEN, JR ;

HOUNG, MP ;

HSIUNG, SK ;

LIU, YC .

APPLIED PHYSICS LETTERS, 1980, 37 (09) :824-826

[9] INVESTIGATION ON TISI2 THIN-FILM OXIDATION BY RADIOACTIVE-TRACER TECHNIQUE [J].

CHEN, JR ;

LIU, YC ;

CHU, SD .

APPLIED PHYSICS LETTERS, 1982, 40 (03) :263-265

[10]

Chu WK., 1978, BACKSCATTERING SPECT

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