STRUCTURAL, BONDING, DYNAMIC, AND ELECTRONIC-PROPERTIES OF LIQUID SILICON - AN ABINITIO MOLECULAR-DYNAMICS STUDY
被引:202
作者:
STICH, I
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机构:SCUOLA INT SUPER STUDI AVANZATI, I-34014 TRIESTE, ITALY
STICH, I
CAR, R
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机构:SCUOLA INT SUPER STUDI AVANZATI, I-34014 TRIESTE, ITALY
CAR, R
PARRINELLO, M
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机构:SCUOLA INT SUPER STUDI AVANZATI, I-34014 TRIESTE, ITALY
PARRINELLO, M
机构:
[1] SCUOLA INT SUPER STUDI AVANZATI, I-34014 TRIESTE, ITALY
[2] IBM CORP, DIV RES, FORSCHUNGSLAB ZURICH, CH-8803 RUSCHLIKON, SWITZERLAND
来源:
PHYSICAL REVIEW B
|
1991年
/
44卷
/
09期
关键词:
D O I:
10.1103/PhysRevB.44.4262
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
We report an extensive first-principles molecular-dynamics study of metallic liquid silicon. Our description of the local order is in excellent agreement with x-ray- and neutron-diffraction experiments. The difference in internal energy between the simulated liquid phase and the crystal agrees well with the experimental enthalpy of melting. Analysis of the valence-electronic-charge density shows persistence of some covalent bonds in the melt. These bonds give rise in the power spectrum of the system dynamics to a well-identifiable feature associated with stretching vibrations. Unlike the case in the crystal, in the liquid the covalent bonds are continuously forming and breaking in response to atomic motion. The majority of bonds are broken on average, leading to fast diffusion and to metallic behavior of the melt. The calculated electronic conductivity shows good agreement with available experimental data.