1W CW, DIFFRACTION-LIMITED, TUNABLE EXTERNAL-CAVITY SEMICONDUCTOR-LASER

被引：34

作者：

MEHUYS, D

WELCH, D

SCIFRES, D

机构：

[1] Spectra Diode Lab., San Jose, CA 95134-1356

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 14期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19930838

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An external-cavity diode laser is demonstrated to emit greater than 1.0 W CW in a diffraction-limited radiation pattern. The laser wavelength is tunable over a 35 nm span centred at 852 nm.

引用

页码：1254 / 1255

页数：2

共 8 条

[1] ABELES J, 1992, 13TH P IEEE INT SEM, pPD12
[2] HECHT E, 1979, OPTICS, P359
[3] HIGH-POWER LASER-AMPLIFIER PHOTONIC INTEGRATED-CIRCUIT FOR 1.48 MU-M WAVELENGTH OPERATION
KOREN, U
JOPSON, RM
MILLER, BI
CHIEN, M
YOUNG, MG
BURRUS, CA
GILES, CR
PRESBY, HM
RAYBON, G
EVANKOW, JD
TELL, B
BROWNGOEBELER, K
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (19) : 2351 - 2353
[4] 2.0W CW, DIFFRACTION-LIMITED TAPERED AMPLIFIER WITH DIODE INJECTION
MEHUYS, D
WELCH, DF
GOLDBERG, L
[J]. ELECTRONICS LETTERS, 1992, 28 (21) : 1944 - 1946
[5] 2.0 W CW, DIFFRACTION-LIMITED OPERATION OF A MONOLITHICALLY INTEGRATED MASTER OSCILLATOR POWER-AMPLIFIER
PARKE, R
WELCH, DF
HARDY, A
LANG, R
MEHUYS, D
OBRIEN, S
DZURKO, K
SCIFRES, D
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (03) : 297 - 300
[6] WALPOLE J, 1992, C LASERS ELECTROOPTI, P338
[7] HIGH-POWER STRAINED-LAYER INGAAS/ALGAAS TAPERED TRAVELING-WAVE AMPLIFIER
WALPOLE, JN
KINTZER, ES
CHINN, SR
WANG, CA
MISSAGGIA, LJ
[J]. APPLIED PHYSICS LETTERS, 1992, 61 (07) : 740 - 741
[8] 1.1 W CW, DIFFRACTION-LIMITED OPERATION OF A MONOLITHICALLY INTEGRATED FLARED-AMPLIFIER MASTER OSCILLATOR POWER-AMPLIFIER
WELCH, DF
PARKE, R
MEHUYS, D
HARDY, A
LANG, R
OBRIEN, S
SCIFRES, S
[J]. ELECTRONICS LETTERS, 1992, 28 (21) : 2011 - 2013

← 1 →