MICROWAVE CONDUCTIVITY OF DISLOCATIONS IN DEFORMED SILICON SINGLE-CRYSTALS

被引：2

作者：

GLEITZ, A ^{[1
]}

HELBERG, HW ^{[1
]}

机构：

[1] SONDERFORSCHUNGSBEREICH 126,GOTTINGEN,FED REP GER

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1985年 / 90卷 / 02期

关键词：

D O I：

10.1002/pssa.2210900266

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K209 / K213

页数：5

共 12 条

[1]

ALTSCHULER HM, HDB MICROWAVE MEASUR

[2] ANISOTROPIC CONDUCTIVITY OF CDS AFTER PLASTIC-DEFORMATION AND CONDUCTION ALONG DISLOCATIONS .2. MEASUREMENTS ON A MICROSCOPIC SCALE [J].

DODING, G ;

LABUSCH, R .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 68 (02) :469-476

[3] ANISOTROPIC CONDUCTIVITY OF CDS AFTER PLASTIC-DEFORMATION AND CONDUCTION ALONG DISLOCATIONS .1. MACROSCOPIC MEASUREMENTS [J].

DODING, G ;

LABUSCH, R .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 68 (01) :143-151

[4]

EROFEEV VN, 1971, SOV PHYS CRYSTALLOGR, V16, P151

[5] DIELECTRIC-RELAXATION BEHAVIOR OF DISLOCATIONS IN SEMICONDUCTORS [J].

HELBERG, HW .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 81 (01) :381-390

[6]

HELBERG HW, 1966, Z ANGEW PHYSIK, V20, P505

[7] ON THE ENERGY-SPECTRUM OF DISLOCATIONS IN SILICON [J].

KVEDER, VV ;

OSIPYAN, YA ;

SCHROTER, W ;

ZOTH, G .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 72 (02) :701-713

[8] CHARACTERISTICS OF THE ENERGY-LEVELS OF DISLOCATIONS IN SILICON [J].

LEMKE, H .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 65 (01) :389-401

[9] DEMAGNETIZING FACTORS OF THE GENERAL ELLIPSOID [J].

OSBORN, JA .

PHYSICAL REVIEW, 1945, 67 (11-1) :351-357

[10]

OSIPYAN YA, 1981, CRYST RES TECHNOL, V16, P239

← 1 2 →