INFLUENCE OF A CONSTRICTION ON THE LONGITUDINAL RESISTANCE OF A 2DEG - EFFECTS OF ELECTRICAL FIELDS AND EDGE STATES

被引:6
作者
HEIN, G [1 ]
SCHNEIDER, P [1 ]
SCHWEITZER, L [1 ]
AHLERS, FJ [1 ]
BLIEK, L [1 ]
NICKEL, H [1 ]
LOSCH, R [1 ]
SCHLAPP, W [1 ]
机构
[1] FTZ,W-6100 DARMSTADT,GERMANY
关键词
D O I
10.1016/0039-6028(92)90355-A
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The breakdown of the quantum Hall effect in constricted GaAlAs heterostructures is studied. For constriction widths w > 100-mu-m very sharp resistance changes are observed. The influence of an additional external field, supplied with an in-plane gate, is to increase the breakdown current if the external field is applied parallel to the Hall field. A model calculation for a confined system of non-interacting electrons in a strong magnetic field and a Hall field shows characteristic features in the density of states which, however, cannot explain the experimental observations.
引用
收藏
页码:293 / 297
页数:5
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