RAMAN CHARACTERIZATION OF SOI-SIMOX STRUCTURES

被引：7

作者：

MARTIN, E

JIMENEZ, J

PEREZRODRIGUES, A

MORANTE, JR

机构：

[1] ETSII,E-47011 VALLADOLID,SPAIN

[2] UNIV BARCELONA,DEPT FIS APL & ELECTR,LCMM,E-08028 BARCELONA,SPAIN

来源：

MATERIALS LETTERS | 1992年 / 15卷 / 1-2期

关键词：

D O I：

10.1016/0167-577X(92)90026-G

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Raman spectroscopy is used for characterizing SOI-SIMOX structures. The measurements are carried out with a Raman microprobe under different laser power densities, showing that the Raman spectrum of these structures is strongly dependent on the excitation laser power density. An in-depth study is made on beveled surfaces revealing the characteristics of the Si-SiO2 interfaces.

引用

页码：122 / 126

页数：5

共 11 条

[1]

BeltranJimenez J., UNPUB

[2]

GUERRA MA, 1990, SOLID STATE TECH NOV, P75

[3]

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[4]

McDaid L. J., 1991, 1991 IEEE International SOI Conference Proceedings (Cat. No.91CH3053-6), P28, DOI 10.1109/SOI.1991.162840