GASAS THIN-FILM SOLAR CELLS

[1] GOBAT AR, 1962, IRE T MILIT ELECTRON, VMIL6, P20

[2] THE USE OF CLOSE SPACING IN CHEMICAL-TRANSPORT SYSTEMS FOR GROWING EPITAXIAL LAYERS OF SEMICONDUCTORS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (11) : 1165 - 1167

[3] PERKINS D, 1964, 4 P PHOT SPEC

[4] SPITZER WG, 1962, PHYS REV LETTERS, V8, P7

[5] OPTICAL ABSORPTION OF GALLIUM ARSENIDE BETWEEN 0.6 AND 2.75 EV [J]. PHYSICAL REVIEW, 1962, 127 (03): : 768 - +

[6] THE REACTION OF GAP(S) WITH H2O(G) AND THE RANGE OF STABILITY OF GAP(S) UNDER PRESSURES OF GA2O AND P-2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (02) : 184 - 191

[1] GOBAT AR, 1962, IRE T MILIT ELECTRON, VMIL6, P20

[2] THE USE OF CLOSE SPACING IN CHEMICAL-TRANSPORT SYSTEMS FOR GROWING EPITAXIAL LAYERS OF SEMICONDUCTORS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (11) : 1165 - 1167

[3] PERKINS D, 1964, 4 P PHOT SPEC

[4] SPITZER WG, 1962, PHYS REV LETTERS, V8, P7

[5] OPTICAL ABSORPTION OF GALLIUM ARSENIDE BETWEEN 0.6 AND 2.75 EV [J]. PHYSICAL REVIEW, 1962, 127 (03): : 768 - +

[6] THE REACTION OF GAP(S) WITH H2O(G) AND THE RANGE OF STABILITY OF GAP(S) UNDER PRESSURES OF GA2O AND P-2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (02) : 184 - 191