CHARACTERIZATION OF LP-MOCVD GROWN (AL, GA)AS/GAAS HETEROSTRUCTURES BY PHOTOLUMINESCENCE - SINGLE HETEROJUNCTION AND INADVERTENT QUANTUM WELLS

被引：4

作者：

ZEMON, S

BLACK, J

NORRIS, P

LEE, J

LAMBERT, G

机构：

[1] GTE Lab Inc, Waltham, MA, USA, GTE Lab Inc, Waltham, MA, USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 12期

关键词：

D O I：

10.1143/JJAP.23.L925

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L925 / L927

页数：3

共 6 条

[1]

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[3] ENERGY-GAP DISCONTINUITIES AND EFFECTIVE MASSES FOR GAAS-ALXGA1-XAS QUANTUM WELLS [J].

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[4] LUMINESCENCE STUDIES OF OPTICALLY PUMPED QUANTUM WELLS IN GAAS-ALXGA1-XAS MULTILAYER STRUCTURES [J].

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[5]

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[6] OPTICAL CHARACTERIZATION OF INTERFACE DISORDER IN GAAS-GA1-XALXAS MULTI-QUANTUM WELL STRUCTURES [J].

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WIEGMANN, W .

SOLID STATE COMMUNICATIONS, 1981, 38 (08) :709-712

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