CLUSTER-ASSEMBLED OVERLAYERS AND HIGH-TEMPERATURE SUPERCONDUCTORS

X-ray photoemission results for interfaces prepared by cluster assembly with nanometer-size clusters deposited on high-T(c) superconductors (HTS's) show a reduction in reactivity because atom interactions with the surface are replaced by cluster interactions. Results for conventional atom deposition show the formation of overlayer oxides that are related to oxygen depletion and disruption of the near-surface region of the HTS's. For cluster assembly of Cr and Cu, there is a very thin reacted region on single-crystal Bi2Sr2CaCu2O8. Reduced reactivity is observed for Cr cluster deposition on single-crystal YBa2Cu3O7-based interfaces. There is no evidence of chemical modification of the surface for Ge and Au cluster assembly on Bi2Sr2CaCu2O8(100). The overlayer grown by Au cluster assembly on Bi2Sr2CaCu2O8 covers the surface at low temperature but roughening occurs upon warming to 300 K. Scanning-tunneling-microscopy results for the Au(cluster)/Bi2Sr2CaCu2O8 system warmed to 300 K shows individual clusters that have coalesced into large clusters. These results offer insight into the role of surface energies and cluster interactions in determining the overlayer morphology. Transmission-electron-microscopy results for Cu cluster assembly on silica show isolated irregularly shaped clusters that do not interact at low coverage. Sintering and labyrinth formation is observed at intermediate coverage and, ultimately, a continuous film is achieved at high coverage. Silica surface wetting by Cu clusters demonstrates that dispersive force are important for these small clusters.