CALCULATIONS OF HIGH-SPEED PERFORMANCE FOR SUBMICROMETER ION-IMPLANTED GAAS-MESFET DEVICES

被引：7

作者：

ABUSAID, MF ^{[1
]}

HAUSER, JR ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695

来源：

关键词：

D O I：

10.1109/T-ED.1986.22594

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：913 / 918

页数：6

共 11 条

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[J]. PHYSICS LETTERS, 1966, 21 (05): : 489 - &
[4] POWER-LIMITING BREAKDOWN EFFECTS IN GAAS-MESFET
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) : 962 - 970
[5] GOLIO MJ, 1983, THESIS N CAROLINA ST
[6] KREMER H, 1976, IEEE T ELECTRON DEVI, V23, P476
[7] LEE FS, 1983, HARDWARE SOFTWARE CO, pCH11
[8] FREQUENCY LIMITS OF GAAS AND INP FIELD-EFFECT TRANSISTORS AT 300K AND 77K WITH TYPICAL ACTIVE-LAYER DOPING
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FREY, J
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (05) : 519 - 519
[9] REISER M, 1972, ELECTRON LETT, V8, P254, DOI 10.1049/el:19720188
[10] Sze S.M., 1981, PHYS SEMICONDUCTOR D, V2nd, P494