NEUTRON-SCATTERING INVESTIGATION OF THE STRUCTURE OF SEMICONDUCTOR-DOPED GLASSES

被引:34
作者
BANFI, GP [1 ]
DEGIORGIO, V [1 ]
SPEIT, B [1 ]
机构
[1] SCHOTT GLASWERKE,W-6500 MAINZ,GERMANY
关键词
D O I
10.1063/1.355067
中图分类号
O59 [应用物理学];
学科分类号
摘要
A small-angle neutron scattering (SANS) study of the structure of II-VI semiconductor crystallites in a semiconductor-doped glass is presented. The scattered intensity I(k) exhibits a peak at a nonzero scattering vector and decreases to zero as k goes to zero. The data are interpreted with a simple phenomenological model, based on local mass conservation, which describes a dilute ps of crystallites- surrounded by depletion zones. We show that SANS allows a quick and accurate measurement of the average size and of the volume fraction of the crystallites, and we give values of both quantities for a commercial series of glasses.
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页码:6925 / 6935
页数:11
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