TYPE-II BAND ALIGNMENT IN SI/SI1-XGEX QUANTUM-WELLS FROM PHOTOLUMINESCENCE LINE SHIFTS DUE TO OPTICALLY INDUCED BAND-BENDING EFFECTS - EXPERIMENT AND THEORY

被引：105

作者：

BAIER, T ^{[1
]}

MANTZ, U ^{[1
]}

THONKE, K ^{[1
]}

SAUER, R ^{[1
]}

SCHAFFLER, F ^{[1
]}

HERZOG, HJ ^{[1
]}

机构：

[1] DAIMLER BENZ AG,FORSCH INST ULM,D-89013 ULM,GERMANY

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.50.15191

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We compare measured energy shifts of photoluminescence lines in Si/Si1-xGex quantum wells as a function of excitation power with theoretical calculations to conclude that the band alignment of the heterointerface is type II. Experimentally, we study molecular-beam epitaxy-grown fully strained Si/Si1-xGex single quantum wells with Ge fractions from 10% to 36%. These show significant blueshifts of the luminescence at increasing excitation density. Theoretically, we calculate self-consistently transition energy changes taking into account band bending due to the photoinduced charge carriers. Only for type-II band alignment are the experimental and theoretical results compatible. © 1994 The American Physical Society.

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页码：15191 / 15196

页数：6

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