MECHANICAL STRENGTH OF SILICON-CRYSTALS AS A FUNCTION OF THE OXYGEN CONCENTRATION

被引：89

作者：

YONENAGA, I ^{[1
]}

SUMINO, K ^{[1
]}

HOSHI, K ^{[1
]}

机构：

[1] SONY CORP, SEMICOND GRP, ATSUGI, KANAGAWA 243, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 08期

关键词：

D O I：

10.1063/1.334272

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2346 / 2350

页数：5

共 15 条

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[6] INSITU X-RAY TOPOGRAPHIC STUDIES OF THE GENERATION AND THE MULTIPLICATION PROCESSES OF DISLOCATIONS IN SILICON-CRYSTALS AT ELEVATED-TEMPERATURES [J].

SUMINO, K ;

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[7]

SUMINO K, 1983, PHILOS MAG A, V47, P753, DOI 10.1080/01418618308245262

[8] ORIGIN OF THE DIFFERENCE IN THE MECHANICAL STRENGTHS OF CZOCHRALSKI-GROWN SILICON AND FLOAT-ZONE-GROWN SILICON [J].

SUMINO, K ;

HARADA, H ;

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JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (01) :L49-L52

[9] DIFFERENCE IN THE MECHANICAL STRENGTHS OF DISLOCATION-FREE CRYSTALS OF CZOCHRALSKI SILICON AND FLOAT-ZONE SILICON [J].

SUMINO, K ;

YONENAGA, I .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (09) :L685-L688

[10]

SUMINO K, 1981, SEMICONDUCTOR SILICO, P208

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