COMMENTS ON THE CALCULATION OF THE EXTENDED STATE ELECTRON-MOBILITY IN AMORPHOUS-SILICON

被引：31

作者：

MARSHALL, JM ^{[1
]}

LECOMBER, PG ^{[1
]}

SPEAR, WE ^{[1
]}

机构：

[1] UNIV DUNDEE,CARNEGIE LAB PHYS,DUNDEE DD1 4HN,SCOTLAND

来源：

SOLID STATE COMMUNICATIONS | 1985年 / 54卷 / 01期

关键词：

D O I：

10.1016/0038-1098(85)91022-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：11 / 14

页数：4

相关论文

共 14 条

[1] CONDUCTION IN A-SI-H STUDIED BY TRAVELING WAVE TECHNIQUE
CHEN, KJ
FRITZSCHE, H
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 441 - 444
[2] ELECTRONIC TRANSPORT IN AMORPHOUS SILICON FILMS
LECOMBER, PG
SPEAR, WE
[J]. PHYSICAL REVIEW LETTERS, 1970, 25 (08) : 509 - &
[3] LOCALIZED STATES IN COMPENSATED A-SI-H
MARSHALL, JM
STREET, RA
THOMPSON, MJ
[J]. PHYSICAL REVIEW B, 1984, 29 (04): : 2331 - 2333
[4] DRIFT MOBILITY STUDIES IN VITREOUS ARSENIC TRISELENIDE
MARSHALL, JM
OWEN, AE
[J]. PHILOSOPHICAL MAGAZINE, 1971, 24 (192): : 1281 - &
[5] MARSHALL JM, UNPUB
[6] EXTENDED-STATE MOBILITY IN HYDROGENATED AMORPHOUS-SILICON
SILVER, M
SNOW, E
ADLER, D
[J]. SOLID STATE COMMUNICATIONS, 1984, 51 (08) : 581 - 584
[7] REVERSE RECOVERY PROPERTIES OF AMORPHOUS AND CRYSTALLINE SI-BASED PIN DIODES
SILVER, M
SNOW, E
GILES, NC
SHAW, MP
CANNELLA, V
PAYSON, S
ROSS, R
HUDGENS, S
[J]. PHYSICA B & C, 1983, 117 (MAR): : 905 - 907
[8] COMPARISON OF FAST TRANSIENT-RESPONSE BETWEEN CRYSTAL AND AMORPHOUS-SILICON PIN PHOTODIODES
SILVER, M
SNOW, E
AIGA, M
CANNELLA, V
ROSS, R
YANIV, Z
SHAW, M
ADLER, D
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 445 - 448
[9] SILVER M, 1983, PHILOS MAG B, V47, pL39
[10] THE INVESTIGATION OF EXCESS CARRIER LIFETIMES IN AMORPHOUS-SILICON BY TRANSIENT METHODS
SPEAR, WE
STEEMERS, HL
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) : 163 - 174