CROSS-SECTIONAL TEM OBSERVATION OF COPPER-IMPLANTED SIO2 GLASS

被引：69

作者：

HOSONO, H

FUKUSHIMA, H

ABE, Y

WEEKS, RA

ZUHR, RA

机构：

[1] VANDERBILT UNIV,DEPT MAT SCI & ENGN,NASHVILLE,TN 37235

[2] OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37831

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1992年 / 143卷 / 2-3期

关键词：

D O I：

10.1016/S0022-3093(05)80564-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Transmission electron microscopic observation has been made on SiO2 glass implanted to a dose of 6 x 10(16) ions/cm2 at an energy of 160 keV and in a sample implanted to 6 x 10(16) ions/cm2 at 160 keV and to 2 x 10(16) ions/cm2 at 35 keV. In the sample with 6 x 10(16) ions/cm2, the depth distribution of implanted Cu is bimodal in shape. It has been found that nano-sized particles of copper are formed in both depth regions of the bimodal distribution and the distribution of Cu colloid diameters has a shape that is close to that of implanted Cu concentrations. A triple layer of Cu colloid particles has been formed by sequential implantation using differing acceleration voltages (160 keV followed by 35 keV).

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页码：157 / 161

页数：5

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