VAPOR-DEPOSITION OF DIAMOND THIN-FILMS ON VARIOUS SUBSTRATES

被引:52
作者
LEE, YH
BACHMANN, KJ
GLASS, JT
LEGRICE, YM
NEMANICH, RJ
机构
[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695
[2] N CAROLINA STATE UNIV,DEPT PHYS,RALEIGH,NC 27695
关键词
D O I
10.1063/1.104011
中图分类号
O59 [应用物理学];
学科分类号
摘要
The growth of diamond films on various polycrystalline metal and (001) Si substrates by biased hot-filament chemical vapor deposition is discussed. The deposited films have been characterized by scanning electron microscopy, x-ray diffraction, Auger electron spectroscopy, and Raman spectroscopy. Films grown on Si, Ni, and W exhibited the best quality according to Raman sp 3/sp2 peak intensity ratios and the full width at half maximum of the 1332 cm-1 Raman peak. The relationship between this quality and substrate properties such as surface energy and lattice parameter is discussed. Also, the residual stress in the film as measured by the Raman peak shift is correlated with the thermal expansion coefficient of the substrate.
引用
收藏
页码:1916 / 1918
页数:3
相关论文
共 14 条
  • [1] [Anonymous], 1979, PROPERTIES DIAMOND
  • [2] BAZHENOV VK, 1985, SOV PHYS SEMICOND+, V19, P829
  • [3] Hellwege KH, 1987, LANDOLT BORNSTEIN NU
  • [4] HONDROS ED, 1977, 1976 P TMS AIME S PR, P1
  • [5] CHARACTERIZATION OF DIAMOND FILMS BY RAMAN-SPECTROSCOPY
    KNIGHT, DS
    WHITE, WB
    [J]. JOURNAL OF MATERIALS RESEARCH, 1989, 4 (02) : 385 - 393
  • [6] BIAS-CONTROLLED CHEMICAL VAPOR-DEPOSITION OF DIAMOND THIN-FILMS
    LEE, YH
    RICHARD, PD
    BACHMANN, KJ
    GLASS, JT
    [J]. APPLIED PHYSICS LETTERS, 1990, 56 (07) : 620 - 622
  • [7] LEE YH, 1990, P MRS S, V162, P119
  • [8] LEGRICE YM, 1990, P MRS S, V162, P219
  • [9] RECONSTRUCTION AND ENERGETICS FOR SURFACES OF SILICON, DIAMOND AND BETA-SIC
    TAKAI, T
    HALICIOGLU, T
    TILLER, WA
    [J]. SURFACE SCIENCE, 1985, 164 (2-3) : 341 - 352
  • [10] Touloukian Y. S., 1975, THERMOPHYSICAL PROPE