EVIDENCE FOR THE CREATION OF THE MAIN ELECTRON TRAP IN BULK GAAS

被引：25

作者：

MARTIN, GM ^{[1
]}

TERRIAC, P ^{[1
]}

MAKRAMEBEID, S ^{[1
]}

GUILLOT, G ^{[1
]}

GAVAND, M ^{[1
]}

机构：

[1] INST NATL SCI APPL LYON,LPM,F-69621 VILLEURBANNE,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 01期

关键词：

D O I：

10.1063/1.93725

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：61 / 63

页数：3

共 15 条

[1] STOICHIOMETRY-CONTROLLED COMPENSATION IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].

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CHEN, RT ;

ELLIOTT, KR ;

KIRKPATRICK, CG .

APPLIED PHYSICS LETTERS, 1982, 40 (01) :46-48

[2]

HOLMES DE, 1982, UNPUB 2ND P C SEM IN

[3] DIRECT EVIDENCE FOR THE NON-ASSIGNMENT TO OXYGEN OF THE MAIN ELECTRON TRAP IN GAAS [J].

HUBER, AM ;

LINH, NT ;

VALLADON, M ;

DEBRUN, JL ;

MARTIN, GM ;

MITONNEAU, A ;

MIRCEA, A .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :4022-4026

[4]

IKOMA T, 1982, I PHYS C SER, V63, P191

[5]

JARVIS TR, 1979, ELECTRON LETT, V20, P620

[6] ORIGIN OF THE 0.82-EV ELECTRON TRAP IN GAAS AND ITS ANNIHILATION BY SHALLOW DONORS [J].

LAGOWSKI, J ;

GATOS, HC ;

PARSEY, JM ;

WADA, K ;

KAMINSKA, M ;

WALUKIEWICZ, W .

APPLIED PHYSICS LETTERS, 1982, 40 (04) :342-344

[7] OUT-DIFFUSION OF THE MAIN ELECTRON TRAP IN BULK GAAS DUE TO THERMAL-TREATMENT [J].

MAKRAMEBEID, S ;

GAUTARD, D ;

DEVILLARD, P ;

MARTIN, GM .

APPLIED PHYSICS LETTERS, 1982, 40 (02) :161-163

[8]

MAKRAMEBEID S, UNPUB

[9] COMPENSATION MECHANISMS IN GAAS [J].

MARTIN, GM ;

FARGES, JP ;

JACOB, G ;

HALLAIS, JP ;

POIBLAUD, G .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2840-2852

[10] COMPENSATION MECHANISMS RELATED TO BORON IMPLANTATION IN GAAS [J].

MARTIN, GM ;

SECORDEL, P ;

VENGER, C .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :8706-8715

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