DC CONDUCTIVITY VERSUS TEMPERATURE OF A METALLIC COMPLEX OF (CH)X WITH POTASSIUM

We have measured the electrical conductivity sigma of heavily K-doped cis-(CH)//x as a function of temperature between 300 K and 4. 2 K. A semiconductor-like behavior of sigma is observed and the attempt to explain our data led us to examine a conduction model involving tunneling between potential barriers. Two activation energies are observed and the transition that occurs in the conductivity behavior could arise from inhomogeneous doping.