HOT-CARRIER INJECTION SUPPRESSION DUE TO THE NITRIDE-OXIDE LDD SPACER STRUCTURE

被引：10

作者：

MIZUNO, T ^{[1
]}

SAWADA, S ^{[1
]}

SAITOH, Y ^{[1
]}

TANAKA, T ^{[1
]}

机构：

[1] TOSHIBA MICROELECTR CORP,KAWASAKI 210,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 03期

关键词：

D O I：

10.1109/16.75170

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hot carrier effects in silicon nitride LDD spacer MOSFET's have been investigated. It is found that the oxide thickness under the nitride film spacer affects hot-carrier effects. The thinner the LDD spacer oxide becomes, the larger the initial drain current degradation becomes at dc stress test and, in addition, the smaller the stress time dependence becomes. Moreover, after the dc stress test, reduced drain current recovers at room temperature. These phenomena are due to the large hot-carrier injection into the LDD nitride spacer, because the nitride film barrier height is much less than the silicon oxide barrier height. Therefore, it is necessary to form the LDD spacer oxide, in order to suppress the large hot-carrier injection in the nitride film LDD spacer MOSFET. Furthermore, the drain current shift mechanism in the nitride LDD spacer MOSFET's is also discussed, considering the lucky electron model.

引用

页码：584 / 591

页数：8

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