NOVEL FIR NONLINEAR OPTICAL-MATERIALS

被引：5

作者：

YOUNGDALE, ER

HOFFMAN, CA

MEYER, JR

BARTOLI, FJ

ENGELHARDT, MA

HOCHST, H

机构：

[1] Naval Res. Lab., Washington, DC

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1990年 / 5卷

关键词：

D O I：

10.1088/0268-1242/5/3S/055

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report the first experimental and theoretical study of nonlinear optical mechanisms in alpha -Sn and alpha -Sn1-xGe x grown by MBE. Non-degenerate four-wave mixing has been employed to measured third-order nonlinear susceptibilities at 10.6 mu m as a function of temperature, laser intensity and difference frequency. There is good agreement between experiment and theoretical calculations based on free carrier contributions to the susceptibility. Comparison is made with optical nonlinearities in Hg-based materials grown by MBE.

引用

页码：S253 / S256

页数：4

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