HOLE INITIATED IMPACT IONIZATION IN INDIUM-ANTIMONIDE

被引:3
作者
ADOMAITIS, E
DOBROVOLSKIS, Z
KROTKUS, A
机构
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1985年 / 38卷 / 02期
关键词
D O I
10.1007/BF00620466
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:145 / 149
页数:5
相关论文
共 15 条
[1]  
ASAUSKAS R, 1980, FIZ TEKH POLUPROV, V14, P2323
[2]  
ASMONTAS S, 1979, FIZ TEKH POLUPROV, V13, P1392
[3]   PICOSECOND OPTOELECTRONIC SWITCHING AND GATING IN SILICON [J].
AUSTON, DH .
APPLIED PHYSICS LETTERS, 1975, 26 (03) :101-103
[4]  
BAUER G, 1980, P NATO ADV STUDY I P, P191
[5]   THE INTERNAL PHOTOELECTRIC EFFECT IN INSB WITH L-BAND PARTICIPATION [J].
BEATTIE, AR .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (12) :2265-2280
[6]  
BEATTIE R, 1983, J PHYS C, V16, pL791
[7]   IMPACT IONIZATION IN P-TYPE INSB [J].
DICK, CL ;
ANCKERJO.B .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (09) :2151-&
[8]  
DOBROVOLSKIS Z, 1979, LITOV FIZ SB, V19, P85
[9]  
DODIN EP, 1979, JETP, V66, P1370
[10]  
KANAI V, 1958, J PHYS SOC JPN, V13, P967