ELECTRONIC-STRUCTURE OF METALLIC OXIDES - BAND-GAP CLOSURE AND VALENCE CONTROL

被引：63

作者：

FUJIMORI, A

机构：

[1] Department of Physics, University of Tokyo, Bunkyo-ku, Tokyo

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1992年 / 53卷 / 12期

关键词：

TRANSITION-METAL OXIDES; METAL-INSULATOR TRANSITIONS; PHOTOEMISSION; X-RAY ABSORPTION; ELECTRON CORRELATION;

D O I：

10.1016/0022-3697(92)90149-8

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We present an overview of photoemission and x-ray absorption studies on the electronic structure of 3d transition-metal and Bi oxides which show metal-insulator transitions as functions of chemical composition. First, chemical methods of controlling the band gaps and the cation valences are systematically reviewed. Then, the evolution of the single-particle spectral function is demonstrated across the metal-insulator transitions arising from the closing of the band gaps and those due to carrier doping.

引用

页码：1595 / 1602

页数：8

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