STUDY OF INFLUENCE OF ANNEALING ON DEFECTS IN DIAMOND FILMS WITH ESR AND IR MEASUREMENTS

被引：18

作者：

ZHANG, WJ ^{[1
]}

ZHANG, FQ ^{[1
]}

WU, QZ ^{[1
]}

CHEN, GH ^{[1
]}

机构：

[1] LANZHOU UNIV,DEPT PHYS,LANZHOU 730001,PEOPLES R CHINA

来源：

MATERIALS LETTERS | 1992年 / 15卷 / 04期

关键词：

D O I：

10.1016/0167-577X(92)90087-Z

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The defects in diamond films, synthesized by dc arc discharge plasma CVD and hot filament CVD, were studied using ESR and IR measurements, and the effects of annealing on defect states were investigated for the first time. The results showed that the films exhibited ESR signals produced by carbon dangling bonds of diamond and graphite. The g values of them were the same, g = 2.002 7, the peak-to-peak line widths were 3.6 and 12.5 G respectively, and the spin density (N(s)) of the sample as-deposited was about 1.3 x 10(17) cm-3. H atoms in the diamond films saturated the C dangling bonds, forming C-H bonds. After annealing at different temperatures, C-H bonds broke and H atoms escaped, and as a result, N(s) varied.

引用

页码：292 / 297

页数：6

共 8 条

[1] STUDY OF DEFECTS IN DIAMOND FILMS WITH ELECTRON-PARAMAGNETIC RESONANCE MEASUREMENTS [J].