ELECTRON-BEAM-INDUCED CURRENT QUANTITATIVE MAPPING - APPLICATION TO SI SOLAR-CELLS

被引：4

作者：

BARHDADI, A

BARBE, M

RIVIERE, A

MAURICE, JL

机构：

[1] LAB PHYS MAT,CNRS,F-92195 MEUDON,FRANCE

[2] ECOLE NORMALE SUPER TAKADDOUM,PHYS SEMICOND & ENERGIE SOLAIRE LAB,RABAT,MOROCCO

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1994年 / 24卷 / 1-3期

关键词：

D O I：

10.1016/0921-5107(94)90300-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Computer processing of electron-beam-induced current images is reported. The grey levels of the image are converted into values of minority-carrier diffusion length L(D). Only one digital image, recorded in appropriate conditions, allows one to determine L(D) in any chosen area of the device. The technique is applied for performing quantitative high resolution assessment of diffusion length in large-grained polycrystalline silicon, in as-grown material as well as in fully processed solar cells.

引用

页码：68 / 73

页数：6

共 16 条

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[2]

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[3]

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[4]

Fahrenbruch A L, 1983, FUNDAMENTALS SOLAR C, P559