DEFECT STRUCTURE AND ELECTRONIC DONOR LEVELS IN STANNIC OXIDE CRYSTALS

被引：329

作者：

SAMSON, S

FONSTAD, CG

机构：

[1] MIT,DEPT ELECT ENGN,CAMBRIDGE,MA 02139

[2] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 10期

关键词：

D O I：

10.1063/1.1662011

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4618 / 4621

页数：4

共 16 条

[1]

BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[2] DETERMINATION OF ELECTRON MASSES IN STANNIC OXIDE BY SUBMILLIMETER CYCLOTRON RESONANCE [J].

BUTTON, KJ ;

FONSTAD, CG ;

DREYBRODT, W .

PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (12) :4539-+

[3] VAPOR PHASE GROWTH OF STANNIC OXIDE SINGLE CRYSTALS [J].

FONSTAD, CG ;

LINZ, A ;

REDLIKER, RH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (09) :1269-&

[4] ELECTRICAL PROPERTIES OF HIGH-QUALITY STANNIC OXIDE CRYSTALS [J].

FONSTAD, CG ;

REDIKER, RH .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (07) :2911-&

[5]

FONSTAD CG, 1970, THESIS MIT

[6]

HUTSON AR, 1959, SEMICONDUCTORS

[7]

KITAZAWA K, 1972, THESIS MIT

[8]

KROGER FA, 1964, CHEMISTRY IMPERFECT

[9]

MARLEY JA, 1965, PHYS REV A, V140, P304

[10]

MARLEY JA, 1964, AF196048447 CONTR

← 1 2 →