ONE-PHOTON KELDYSH ABSORPTION IN DIRECT-GAP SEMICONDUCTORS

被引：21

作者：

NARDUCCI, LM

MITRA, SS

SHATAS, RA

PFEIFFER, PA

VAIDYANATHAN, A

机构：

[1] USA,PHYS SCI DIRECTORATE,REDSTONE ARSENAL,AL 35809

[2] WORCESTER POLYTECH INST,DEPT PHYS,WORCESTER,MA 01609

[3] UNIV RHODE ISLAND,DEPT PHYS,KINGSTON,RI 02881

来源：

PHYSICAL REVIEW B | 1976年 / 14卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.14.2508

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2508 / 2513

页数：6

共 20 条

[1] BASSANI GF, 1966, P INT SCH PHYS ENRIC, V34, P33
[2] Bredikhin V. I., 1973, Soviet Physics - Uspekhi, V16, P299, DOI 10.1070/PU1973v016n03ABEH005183
[3] CALLAWAY J, 1974, QUANTUM THEORY SOL A, P248
[4] 4-PHOTON TRANSITIONS IN ZNS
CATALANO, IM
CINGOLANI, A
MINAFRA, A
[J]. SOLID STATE COMMUNICATIONS, 1975, 16 (09) : 1109 - 1111
[5] Elliott R. J., 1963, POLARONS EXCITONS, P269
[6] 2-PHOTON EXCITATION RATE IN INDIUM-ANTIMONIDE
FOSSUM, HJ
CHANG, DB
[J]. PHYSICAL REVIEW B, 1973, 8 (06): : 2842 - 2849
[7] INFRARED ABSORPTION AND VALENCE BAND IN INDIUM ANTIMONIDE
GOBELI, GW
FAN, HY
[J]. PHYSICAL REVIEW, 1960, 119 (02): : 613 - 620
[8] KARTHEUSER E, 1972, POLARONS IONIC CRYST
[9] KELDYSH LV, 1965, SOV PHYS JETP-USSR, V20, P1307
[10] ABSORPTION EDGE IN DEGENERATE PARA TYPE GAAS
KUDMAN, I
SEIDEL, T
[J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (03) : 771 - &