CHARACTERIZATION OF PROCESS-INDUCED DEFECTS IN SILICON WITH TRIPLE-CRYSTAL DIFFRACTOMETRY

被引：56

作者：

LOMOV, AA ^{[1
]}

ZAUMSEIL, P ^{[1
]}

WINTER, U ^{[1
]}

机构：

[1] AKAD WISSENSCH DDR,INST PHYS WERKSTOFFBEARBEITUNG,DDR-1166 BERLIN,GER DEM REP

来源：

ACTA CRYSTALLOGRAPHICA SECTION A | 1985年 / 41卷 / MAY期

关键词：

D O I：

10.1107/S0108767385000502

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：223 / 227

页数：5

共 18 条

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JOURNAL OF PHYSICS F-METAL PHYSICS, 1973, 3 (02) :471-496

[3]

EHRHART P, 1974, PHYS REV B, V8, P2604

[4] APPLICATIONS OF X-RAY TRIPLE CRYSTAL DIFFRACTOMETRY TO STUDIES ON THE DIFFUSION-INDUCED DEFECTS IN SILICON-CRYSTALS [J].

IIDA, A .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1979, 54 (02) :701-706

[5] SEPARATE MEASUREMENTS OF DYNAMICAL AND KINEMATICAL X-RAY DIFFRACTIONS FROM SILICON-CRYSTALS WITH A TRIPLE CRYSTAL DIFFRACTOMETER [J].

IIDA, A ;

KOHRA, K .

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[7]

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[8] HUANG DIFFUSE-SCATTERING FROM DISLOCATION LOOPS AND COBALT PRECIPITATES IN COPPER [J].

LARSON, BC ;

SCHMATZ, W .

PHYSICAL REVIEW B, 1974, 10 (06) :2307-2314

[9] COMPARISON OF DIFFUSE SCATTERING BY DEFECTS MEASURED IN ANOMALOUS TRANSMISSION AND NEAR BRAGG REFLECTIONS [J].

LARSON, BC ;

YOUNG, FW .

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[10]

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